PART |
Description |
Maker |
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
GM194 |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
IXGH28N120B IXGT28N120B |
High Voltage IGBT IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
IXYS Corporation
|
IXDN55N120D1 IXDN55N120 |
IGBT Discretes: NPT IGBT High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT Ultra-Fast IGBT Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
BD7542SFVM BD7541SG BD7541SG-TR BD7541G BD7541G-TR |
Low Powe Input-Output Full Swing Operational Amplifier
|
ROHM
|
CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE 100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
SGS13N60UFD SGS13N60UFDTU |
Discrete, High Performance IGBT with Diode Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
SGP13N60UFD SGP13N60UFDTU |
Discrete, High Performance IGBT with Diode Ultra-Fast IGBT
|
Fairchild Semiconductor
|